by Koma group

 

Publications by Prof. Koma’s group

  • Heteroepitaxy of 2D materials (1984 – 2000)
  1. Fabrication and characterization of heterostructures with subnanometer thickness, A. Koma, K. Sunouchi, T. Miyajima, Microelectronic Engineering 2, 129 (1984)
  2. Electronic structure of a monolayer NbSe2 film grown heteroepitaxially on the cleaved face of 2H-MoS2, A. Koma, K. Sunouchi, T. Miyajima, in Proc. 17th Int. Conf. on the Physics of Semiconductors, San Francisco 1984 (Springer, New York, 1985), p. 1465
  3. Fabrication of ultrathin heterostructures with van der Waals epitaxy, A. Koma, K. Sunouchi, T. Miyajima, Journal of Vacuum Science & Technology B 3, 724 (1985)
  4. Van der Waals epitaxy – a new method to prepare ultrathin heterostructures, A.Koma, 17th Conference on Solid State Devices and Materials, Tokyo (1985)
  5. Ultrasharp interfaces grown with van der Waals epitaxy, A. Koma, K. Yoshimura, Surface Science 174, 556 (1986)
  6. Application of van der Waals epitaxy to highly heterogeneous systems, K. Saiki, K. Ueno, T. Shimada, A. Koma, Journal of Crystal Growth 95, 603 (1989)
  7. Heteroepitaxy of a two-dimensional material on a three-dimensional material, A. Koma, K. Saiki, Y. Sato, Applied Surface Science 41-2, 451 (1989)
  8. Epitaxial growth of transition metal dichalcogenides on cleaved faces of mica, K. Ueno, K. Saiki, T. Shimada, A. Koma, Journal of Vacuum Science & Technology A 8, 68 (1990)
  9. Heteroepitaxial growth of layered transition-metal dichalcogenides on sulpher-terminated GaAs (111) surfaces, K. Ueno, T. Shimada, K. Saiki, A. Koma, Applied Physics Letters 56, 327 (1990)
  10. Van der Waals epitaxial-growth and characterization of MoSe2 thin-films on SnS2, FS. Ohuchi, BA. Parkinson, K. Ueno, A. Koma, Journal of Applied Physics 68, 2168 (1990)
  11. RHEED intensity oscillation during epitaxial growth of layered materials, T. Shimada, H.Yamamoto, K.Saiki and A.Koma, Japanese Journal of Applied Physics 29, L2096 (1990)
  12. Heteroepitaxial growth by van der Waals interaction in one-, two- and three-dimensional materials, A. Koma, K. Ueno, K. Saiki, Journal of Crystal Growth 111, 1029 (1991)
  13. Growth of MoSe2 thin films with van der Waals epitaxy, FS. Ohuchi, T. Shimada, BA. Parkinson, K. Ueno, A. Koma, Journal of Crystal Growth 111, 1033 (1991)
  14. Hetero-epitaxy of layered semiconductor GaSe on GaAs (111)B surface, K. Ueno, H. Abe, K. Saiki , A. Koma, Japanese Journal of Applied Physics 30, L1352 (1991)
  15. Periodic lattice-distortions as a result of lattice mismatch in epitaxial films of two-dimensional materials, BA. Parkinson, FS. Ohuchi, K. Ueno, A. Koma, Applied Physics Letters 58, 472 (1991)
  16. Van der Waals epitaxy -a new epitaxial growth method for a highly lattice-mismatched system, A. Koma, Thin Solid Films 216, 72 (1992)
  17. New epitaxial growth method for modulated structures using van der Waals interactions, A. Koma, Surface Science 267, 29 (1992)
  18. Hetero-epitaxy of layered compound semiconductor GaSe onto GaAs surfaces for very effective passivation of nanometer structures, K. Ueno, H. Abe, K. Saiki , A. Koma, Surface Science 267, 43 (1992)
  19. Molecular-beam epitaxy of SnSe2 – Chemsitry and electronic properties of interfaces, T. Shimasa, FS. Ohuchi, A. Koma, Japanese Journal of Applied Physics 32, 1182 (1993)
  20. Heteroepitaxial growth of layered semiconductor GaSe on a hydrogen-terminated Si(111) surface, K. Liu, K. Ueno, Y. Fujikawa, K. Saiki, A. Koma, Japanese Journal of Applied Physics 32, L434 (1993)
  21. Heteroepitaxial growth of layered GaSe films on GaAs(001) surfaces, H. Abe, K. Ueno, K. Saiki, A. Koma, Japanese Journal of Applied Physics 32, L1444 (1993)
  22. Polytypes and charge-density waves of ultrathin TaS2 films grown by van der Waals epitaxy, T. Shimada, FS. Ohuchi, A. Koma, Surface Science 291, 57 (1993)
  23. Characterization of epitaxial films of layered materials using Moiré images of scanning tunneling microscope, T. Mori, H. Abe, K. Saiki, A. Koma, Japanese Journal of Applied Physics 32, 2945 (1993)
  24. Structure determination of ultrathin NbSe2 films by grazing-incidence X-ray diffraction, T. Shimada, Y. Furukawa, E. Arakawa, K. Takeshita, T. Matsushita, H. Yamamoto, A. Koma, Solid State Communications 89, 583 (1994)
  25. Improved heteroepitaxial growth of layered NbSe2 on GaAs (111)B, H. Yamamoto, K. Yoshii, K. Saiki, A. Koma, Journal of Vacuum Science & Technology A 12, 125 (1994)
  26. Van der Waals epitaxy on hydrogen-terminated Si(111) surfaces and investigation of its growth-mechanism by atomic-force microscope, K. Ueno, M. Sakurai, A. Koma, Journal of Crystal Growth 150, 1180 (1995)
  27. Preparation of GaS thin films by molecular beam epitaxy, H. Yamada, K. Ueno, A. Koma, Japanese Journal of Applied Physics 35, L568 (1996)
  28. Epitaxial growth of TiSe2 thin films on Se-terminated GaAs(111)B, H. Nishikawa, T. Shimada, A. Koma, Journal of Vacuum Science & Technology A 14, 2893 (1996)
  29. Polytypes and crystallinity of ultrathin epitaxial films of layered materials studied with grazing incidence X-ray diffraction, T. Shimada, H. Nishikawa, A. Koma, Y. Furukawa, E. Arakawa, K. Takeshita, T. Matsushita, Surface Science 369, 379 (1996)
  30. Nanostructure fabrication by selective growth of molecular crystals on layered material substrates, K. Ueno, K. Sasaki, N. Takeda, K. Saiki, A. Koma, Applied Physics Letters 70, 1104 (1997)
  31. Van der Waals epitaxy of metal dihalide, T. Ueno, H. Yamamoto, K. Saiki, A. Koma, Applied Surface Science 113, 33 (1997)
  32. Investigation of the growth mechanism of layered semiconductor GaSe, K. Ueno, N. Takeda, K. Sasaki, A. Koma, Applied Surface Science 113, 38 (1997)
  33. Nanostructure fabrication using selective growth on nanosize patterns drawn by a scanning probe microscope, K. Sasaki, K. Ueno, A. Koma, Japanese Journal of Applied Physics 36, 4061 (1997)
  34. Epitaxial growth of ZnSe on Si(111) with lattice-matched layered InSe buffer layers, T. Löher, A. Koma, Japanese Journal of Applied Physics 37, L1062 (1998)
  35. Van der Waals type buffer layers: epitaxial growth of the large lattice mismatch system CdS/InSe/H-Si(111), T. Löher, K. Ueno, A. Koma, Applied Surface Science 130-132, 334 (1998)
  36. Fabrication of C60 Nanostructures by Selective Growth on GaSe/MoS2 and InSe/MoS2 Heterostructure Substrates, K. Ueno, K. Sasaki, T. Nakahara, A. Koma, Applied Surface Science, 130-132, 670 (1998)
  37. A novel method to fabricate a molecular quantum structure: Selective growth of C60 on layered material heterostructures, K. Ueno, K. Sasaki, K. Saiki, A. Koma, Japanese Journal of Applied Physics 38, 511 (1999)
  38. Van der Waals epitaxy for highly lattice-mismatched systems, A. Koma, Journal of Crystal Growth 201, 236 (1999)
  39. Modulated STM images of ultrathin MoSe2 films grown on MoS2(0001) studied by STM/STS, H. Murata, A. Koma, Physical Review B 59, 10327 (1999)
  40. Investigation of the growth mechanism of an InSe epitaxial layer on a MoS2 substrate, T. Hayashi, K. Ueno, K. Saiki, A. Koma, Journal of Crystal Growth 219, 115 (2000)
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