他研究室論文

 

他研究室論文

  1. Towards van der Waals Epitaxial Growth of GaAs on Si using a Graphene Buffer Layer, Y. Alaskar, S. Arafin, D. Wickramaratne, MA. Zurbuchen, L. He, J. McKay, Q. Lin, MS. Goorsky, RK. Lake, KL. Wang, Advanced Functional Materials Early View (2014)
  2. Molecular beam epitaxy growth of high quality p-doped SnS van der Waals epitaxy on a graphene buffer layer, W. Wang, KK. Leung, WK. Fong, SF. Wang, YY. Hui, SP. Lau, Z. Chen, LJ. Shi, CB. Cao, C. Surya, Journal of Applied Physics 111, 093520 (2012)
  3. Controlled synthesis of topological insulator nanoplate arrays on mica, H. Li, J. Cao, WS. Zheng, YL. Chen, D. Wu, WH. Dang, K. Wang, HL. Peng, ZF. Liu, Journal of the American Chemical Society 134, 6132 (2012)
  4. Incommensurate van der Waals epitaxy of nanowire arrays: A case study with ZnO on muscovite mica substrates, MIB. Utama, FJ. Belarre, C. Magen, B. Peng, J. Arbiol, QH. Xiong, Nano Letters 12, 2146 (2012)
  5. Topological insulator nanostructures for near-infrared transparent flexible electrodes, HL. Peng, WH. Dang, J. Cao, YL. Chen, W. Wu, WS. Zheng, H. Li, ZX. Shen, ZF. Liu, Nature Chemistry 4, 281 (2012)
  6. Van der Waals epitaxy of InAs nanowires vertically aligned on single-layer graphene,  YJ. Hong, WH. Lee, YP. Wu, RS. Ruoff, T. Fukui, Nano Letters 12, 1431 (2012)
  7. Epitaxial II-VI tripod nanocrystals: A Generalization of van der Waals epitaxy for nonplanar polytypic nanoarchitectures, MIB. Utama, Q. Zhang, SF. Jia, DH. Li, JB. Wang, QH. Xiong, Acs Nano 6, 2281 (2012)
  8. Vertically aligned cadmium chalcogenide nanowire arrays on muscovite mica: A demonstration of epitaxial growth strategy, MIB. Utama, ZP. Peng, R. Chen, B. Peng, XL. Xu, YJ. Dong, LM. Wong, SJ. Wang, HD. Sun, QH. Xiong, Nano Letters 11, 3051 (2011)
  9. The van der Waals epitaxy of Bi2Se3 on the vicinal Si(111) surface: an approach for preparing high-quality thin films of a topological insulator, HD. Li, ZY. Wang, X. Kan, X. Guo, HT. He, Z. Wang, Z JN. Wang, TL. Wong, N. Wang, MH. Xie, New Journal of Physics 12, 103038 (2010)
  10. Epitaxial heterostructures of ultrathin topological insulator nanoplate and graphene,  WH. Dang, HL. Peng, H. Li, P. Wang, ZF. Liu, Nano Letters 10, 2870 (2010)
  11. Electron beam irradiation effect for solid C60 epitaxy on grapheme, A. Hashimoto, H. Terasaki, A. Yamamoto, S. Tanaka, Diamond and Related Materials 18, 388 (2009)
  12. Growth of iron phthalocyanine nanoweb and nanobrush using molecular beam epitaxy,  AK. Debnath, S. Samanta, A. Singh, DK. Aswal, SK. Gupta, JV. Yakhmi, SK. Deshpande, AK. Poswal, C. Surgers, Physica E -low-dimensional Systems & Nanostructures 41, 154 (2008)
  13. Van der Waals epitaxy of solid C60 on graphene sheet, A. Hashimoto, K. Iwao, S. Tanaka, A. Yamamoto, Diamond and Related Materials 17, 1622 (2008)
  14. Pulsed laser deposition of Bi2Te3 thermoelectric films, A. Bailini, F. Donati, M. Zamboni, V. Russo, M. Passoni, CS. Casari, AL. Bassi, CE. Bottani, Applied Surface Science 254, 1249 (2007)
  15. Deposition of the layered semiconductor SnS2 onto H-terminated Si(111) surfaces: failure of van der Waals epitaxy and possible implications, A. Islam, A. Thissen, A. Klein,  W. Jaegermann, Surface Science 572, 476 (2004)
  16. Self-assembling of FePt nanostructures by quasi-van der Waals epitaxy, M. Maret, B. Gilles, I. Guhr, B. Riedlinger, M. Albrecht, G. Schatz, E. Beaurepaire, Nanotechnology  15, 1590 (2004)
  17. Epitaxial growth of II-VI semiconductor CdTe on a layered material NbSe2, S. Kuroda, K. Minami, K. Takita, Journal of Crystal Growth 262, 383 (2004)
  18. The growth of PbTe on H-terminated Si(111) substrate by hot wall epitaxy, YK. Yang, HY. Chen, DM. Li, DQ. Yuan, B. Zheng, S. Yu, GT. Zou, Infrared Physics & Technology 44, 299 (2003)
  19. Formation of textured WS2 thin films by van der Waals rheotaxy process and their photoactivity, PS. Patil, EA. Ennaoui, S. Fiechter, H. Tributsch, SB. Sadale, Indian Journal of Pure & Applied Physics 41, 369 (2003)
  20. Chemisorption of C2 biradical and acetylene on reconstructed diamond (111)-(2 x 1),  SW.Yang, XN.Xie, P.Wu, KP. Loh, Journal of Physical Chemistry B 107, 985 (2003)
  21. Structural change at the interface of 4 ‘-nitrobenzylidene-3-acetamino-4-methoxyaniline heteroepitaxial layer grown on 4’-nitrobenzylidene-3-ethylearbonylamino-4-methoxyaniline by microprobe laser Raman spectroscopy, T. Yamashiki, K. Tsuda, Japanese Journal of Applied Physics 41, 3965 (2002)
  22. Surface resonances at transition metal dichalcogenide heterostructures, C. Kreis, S. Werth, R. Adelung, L. Kipp, M. Skibowski, D. Voss, P. Kruger, A. Mazur, J. Pollmann, Physical Review B 65, 153314 (2002)
  23. Electronic band structure of single-crystal and single-layer WS2: Influence of interlayer van der Waals interactions, A. Klein, S. Tiefenbacher, V. Eyert, C. Pettenkofer, W. Jaegermann, Physical Review B 64, 205416 (2001)
  24. Optical and photovoltaic properties of indium selenide thin films prepared by van der Waals epitaxy,  JF. Sanchez-Royo, A. Segura, O. Lang, E. Schaar, C. Pettenkofer, W. Jaegermann, L. Roa, A. Chevy, Journal of Applied Physics 90, 2818 (2001)
  25. Layered semiconductors and related systems, H. Starnberg, Acta Physica Polonica A  100, 301 (2001)
  26. Two-step growth of C60 films on H-terminated Si (111) substrate, H.Takashima, M. Nakaya, A. Yamamoto, A. Hashimoto, Journal of Crystal Growth 227, 825 (2001)
  27. Perspectives of the concept of van der Waals epitaxy: growth of lattice mismatched GaSe, W. Jaegermann, R. Rudolph, A. Klein, C. Pettenkofer, Thin Solid Films 380, 276 (2000)
  28. Quasi van der Waals epitaxy of ZnSe on the layered chalcogenides InSe and GaSe, E. Wisotzki, A. Klein, W. Jaegermann, Thin Solid Films 380, 263 (2000)
  29. Electronic properties of WS2 monolayer films, A. Klein, S. Tiefenbacher, V. Eyert, C. Pettenkofer, W. Jaegermann, Thin Solid Films 380, 221 (2000)
  30. Tracing the valence band maximum during epitaxial growth of HfS2 on WSe2, C. Kreis, M. Traving, R. Adelung, L. Kipp, M. Skibowski, Applied Surface Science 166, 17 (2000)
  31. k//-resolved electronic structure of quasi-free 2-dimensional HfS2 clusters, C.Kreis, M.Traving, R.Adelung, L.Kipp, M.Skibowski, Europhysics Lettters 52,  189-195 (2000)
  32. Moiré pattern in LEED obtained by van der Waals epitaxy of lattice mismatched WS2/MoTe2 (0001) heterointerfaces, S. Tiefenbacher, C. Pettenkofer, W. Jaegermann, Surface Science 450, 181 (2000)
  33. Band lineup of a SnS2/SnSe2/SnS2 semiconductor quantum well structure prepared by van der Waals epitaxy, R. Schlaf,C. Pettenkofer, W. Jaegermann, Journal of Applied Physics 85, 6550 (1999)
  34. Band lineup of layered semiconductor heterointerfaces prepared by van der Waals epitaxy: Charge transfer correction term for the electron affinity rule, R. Schlaf, O. Lang, C. Pettenkofer, W. Jaegermann, Journal of Applied Physics 85, 2732 (1999)
  35. Heteroepitaxy of layered compound InSe and InSe/GaSe onto GaAs substrates, M. Budiman, A. Yamada, M. Konagai, Japanese Journal of Applied Physics 37, 4092 (1998)
  36. Interaction of GaSe with GaAs(111): Formation of heterostructures with large lattice mismatch, LE. Rumaner, MA. Olmstead, FS. Ohuchi, Journal of Vacuum Science & Technology B 16, 977 (1998)
  37. Electronically decoupled films of InSe prepared by van der Waals epitaxy: Localized and delocalized valence states, A. Klein, O. Lang, R. Schlaf, C. Pettenkofer, W. Jaegermann, Physical Review Letters 80, 361 (1998)
  38. Photovoltaic properties of indium selenide thin films prepared by van der Waals epitaxy,   JF. Sanchez-Royo, A. Segura, O. Lang, C. Pettenkofer, W. Jaegermann, A. Chevy, L. Roa, Thin Solid Films 307, 283 (1997)
  39. Van der Waals epitaxy with C60 molecules and change of the growth mechanism by Ba-doping, H. Sitter, D. Stifter, TN. Manh, Thin Solid Films 306, 313 (1997)
  40. Van der Waals epitaxy of the layered semiconductors SnSe2 and SnS2: Morphology and growth modes, R. Schlaf, NR. Armstrong, BA. Parkinson, C. Pettenkofer, W. Jaegermann, Surface Science 385, 1 (1997)
  41. The van der Waals epitaxial growth of GaSe on Si(111), LT. Vinh, M. Eddrief, JE. Mahan, A. Vantomme, JH. Song, MA. Nicolet, Journal of Applied Physics 81 7289 (1997)
  42. Experimental determination of quantum dipoles at semiconductor heterojunctions prepared by van der Waals epitaxy: Linear correction term for the electron affinity rule, R. Schlaf, O. Lang, C. Pettenkofer, W. Jaegermann, NR. Armstrong, Journal of Vacuum Science & Technology A 15 1365 (1997)
  43. Nucleation and growth of GaSe on GaAs by van der Waal epitaxy, LE. Rumaner, JL. Gray, FS. Ohuchi, Journal of Crystal Growth 177, 17 (1997)
  44. Preparation of pristine and Ba-doped C60 films by hot-wall epitaxy, H. Sitter, D. Stifter, TN. Manh, Journal of Crystal Growth 174, 828 (1997)
  45. Growth modes of organic semiconductor thin films using organic molecular beam deposition: epitaxy, van der Waals epitaxy, and quasi-epitaxy, SR. Forrest, PE. Burrows, Supramolecular Science 4, 127 (1997)
  46. Band lineup of lattice mismatched InSe/GaSe quantum well structures prepared by van der Waals epitaxy: Absence of interfacial dipoles, O. Lang, A. Klein, C. Pettenkofer, W. Jaegermann, A. Chevy, Journal of Applied Physics 80, 3817 (1996)
  47. GaSe/Si(111) heteroepitaxy: The early stages of growth, Y. Zheng, A. Koebel, JF. Petroff, JC. Boulliard, B. Capelle, M. Eddrief, Journal of Crystal Growth 162, 135 (1996)
  48. Vacuum sublimation of GaSe – a molecular source for deposition of GaSe, A. Lusviksson, LE. Rumaner, JW. Rogers, FS. Ohuchi, Journal of Crystal Growth 151, 114 (1995)
  49. InSe/GaSe heterointerfaces prepared by van der Waals epitaxy, O. Lang, A. Klein, R. Schlaf, T. Loher, C. Pettenkofer, W. Jaegermann, A.Chevy, Journal of Crystal Growth  146, 439 (1995)
  50. Epitaxial-films of the 3D semiconductor CdS on the 2D layered substrate MX2 prepared by van der Waals epitaxy, T. Loher, Y. Tomm, C. Pettenkofer, M. Giesig, W. Jaegermann, Journal of Crystal Growth 146, 408 (1995)
  51. Epitaxial-films of WS2 by metal-organic van der Waals epitaxy (MO-VDWE), S. Tiefenbacher, H. Sehnert, C. Pettenkofer, W. Jaegermann, Surface Science 318, L1161 (1994)
  52. Van der Waals epitaxy of three‐dimensional CdS on the two‐dimensional layered substrate MoTe2(0001), T. Loher, C. Pettenkofer, W. Jaegermann, Applied Physics Letters 65, 555 (1994)
  53. Single-crystalline GaSe/WSe2 heterointerfaces grown by van der Waals, epitaxy. II. Junction characterization, O. Lang, YTomm, R. Schlaf, C. Pettenkofer, W. Jaegermann, Journal of Applied Physics 75, 7814 (1994)
  54. Single-crystalline GaSe/WSe2 heterointerfaces grown by van der Waals, epitaxy. I. Growth-conditons, O. Lang, R. Schlaf, Y. Tomm, C. Pettenkofer, W. Jaegermann, Journal of Applied Physics 75, 7805 (1994)
  55. Van-der-Waals epitaxy of thin InSe films MoTe2, R. Schlaf, S. Tiefenbacher, O. Lang, C. Pettenkofer, W. Jaegermann,  Surface Science 303, L343 (1994)
  56. Heteroepitaxy of GaSe layered semiconductor compound on Si(111) 7 × 7 substrate: a Van der Waals epitaxy?, LT. Vinh, M. Eddrief, C. Sebenne, A. Sacuto, M. Balkanski, Journal of Crystal Growth 135, 1 (1994)
  57. Strained-layer van der Waals epitaxy in a Langmuir-Blodgett-film, R.Viswanathan,  JA.Zasadzinkski, DK.Schwartz, Science 261, 449 (1993)
  58. Van der Waals epitaxy of thick Sb, Ge, and Ge/Sb films on mica, HJ. Osten, J. Klatt, G. Lippert, Applied Physics Letters 60, 44 (1992)
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