小間研究室論文
小間研究室関係論文
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層状物質ヘテロエピタキシャル成長関係(1984年~2000年)
- Fabrication and characterization of heterostructures with subnanometer thickness, A. Koma, K. Sunouchi, T. Miyajima, Microelectronic Engineering 2, 129 (1984)
- Electronic structure of a monolayer NbSe2 film grown heteroepitaxially on the cleaved face of 2H-MoS2, A. Koma, K. Sunouchi, T. Miyajima, in Proc. 17th Int. Conf. on the Physics of Semiconductors, San Francisco 1984 (Springer, New York, 1985), p. 1465
- Fabrication of ultrathin heterostructures with van der Waals epitaxy, A. Koma, K. Sunouchi, T. Miyajima, Journal of Vacuum Science & Technology B 3, 724 (1985)
- Van der Waals epitaxy – a new method to prepare ultrathin heterostructures, A.Koma, 17th Conference on Solid State Devices and Materials, Tokyo (1985)
- Ultrasharp interfaces grown with van der Waals epitaxy, A. Koma, K. Yoshimura, Surface Science 174, 556 (1986)
- Application of van der Waals epitaxy to highly heterogeneous systems, K. Saiki, K. Ueno, T. Shimada, A. Koma, Journal of Crystal Growth 95, 603 (1989)
- Heteroepitaxy of a two-dimensional material on a three-dimensional material, A. Koma, K. Saiki, Y. Sato, Applied Surface Science 41-2, 451 (1989)
- Epitaxial growth of transition metal dichalcogenides on cleaved faces of mica, K. Ueno, K. Saiki, T. Shimada, A. Koma, Journal of Vacuum Science & Technology A 8, 68 (1990)
- Heteroepitaxial growth of layered transition-metal dichalcogenides on sulfur-terminated GaAs (111) surfaces, K. Ueno, T. Shimada, K. Saiki, A. Koma, Applied Physics Letters 56, 327 (1990)
- Van der Waals epitaxial-growth and characterization of MoSe2 thin-films on SnS2, FS. Ohuchi, BA. Parkinson, K. Ueno, A. Koma, Journal of Applied Physics 68, 2168 (1990)
- RHEED intensity oscillation during epitaxial growth of layered materials, T. Shimada, H.Yamamoto, K.Saiki and A.Koma, Japanese Journal of Applied Physics 29, L2096 (1990)
- Heteroepitaxial growth by van der Waals interaction in one-, two- and three-dimensional materials, A. Koma, K. Ueno, K. Saiki, Journal of Crystal Growth 111, 1029 (1991)
- Growth of MoSe2 thin films with van der Waals epitaxy, FS. Ohuchi, T. Shimada, BA. Parkinson, K. Ueno, A. Koma, Journal of Crystal Growth 111, 1033 (1991)
- Hetero-epitaxy of layered semiconductor GaSe on GaAs (111)B surface, K. Ueno, H. Abe, K. Saiki , A. Koma, Japanese Journal of Applied Physics 30, L1352 (1991)
- Periodic lattice-distortions as a result of lattice mismatch in epitaxial films of two-dimensional materials, BA. Parkinson, FS. Ohuchi, K. Ueno, A. Koma, Applied Physics Letters 58, 472 (1991)
- Van der Waals epitaxy -a new epitaxial growth method for a highly lattice-mismatched system, A. Koma, Thin Solid Films 216, 72 (1992)
- New epitaxial growth method for modulated structures using van der Waals interactions, A. Koma, Surface Science 267, 29 (1992)
- Hetero-epitaxy of layered compound semiconductor GaSe onto GaAs surfaces for very effective passivation of nanometer structures, K. Ueno, H. Abe, K. Saiki , A. Koma, Surface Science 267, 43 (1992)
- Molecular-beam epitaxy of SnSe2 – Chemsitry and electronic properties of interfaces, T. Shimasa, FS. Ohuchi, A. Koma, Japanese Journal of Applied Physics 32, 1182 (1993)
- Heteroepitaxial growth of layered semiconductor GaSe on a hydrogen-terminated Si(111) surface, K. Liu, K. Ueno, Y. Fujikawa, K. Saiki, A. Koma, Japanese Journal of Applied Physics 32, L434 (1993)
- Heteroepitaxial growth of layered GaSe films on GaAs(001) surfaces, H. Abe, K. Ueno, K. Saiki, A. Koma, Japanese Journal of Applied Physics 32, L1444 (1993)
- Polytypes and charge-density waves of ultrathin TaS2 films grown by van der Waals epitaxy, T. Shimada, FS. Ohuchi, A. Koma, Surface Science 291, 57 (1993)
- Characterization of epitaxial films of layered materials using Moiré images of scanning tunneling microscope, T. Mori, H. Abe, K. Saiki, A. Koma, Japanese Journal of Applied Physics 32, 2945 (1993)
- Structure determination of ultrathin NbSe2 films by grazing-incidence X-ray diffraction, T. Shimada, Y. Furukawa, E. Arakawa, K. Takeshita, T. Matsushita, H. Yamamoto, A. Koma, Solid State Communications 89, 583 (1994)
- Improved heteroepitaxial growth of layered NbSe2 on GaAs (111)B, H. Yamamoto, K. Yoshii, K. Saiki, A. Koma, Journal of Vacuum Science & Technology A 12, 125 (1994)
- Van der Waals epitaxy on hydrogen-terminated Si(111) surfaces and investigation of its growth-mechanism by atomic-force microscope, K. Ueno, M. Sakurai, A. Koma, Journal of Crystal Growth 150, 1180 (1995)
- Preparation of GaS thin films by molecular beam epitaxy, H. Yamada, K. Ueno, A. Koma, Japanese Journal of Applied Physics 35, L568 (1996)
- Epitaxial growth of TiSe2 thin films on Se-terminated GaAs(111)B, H. Nishikawa, T. Shimada, A. Koma, Journal of Vacuum Science & Technology A 14, 2893 (1996)
- Polytypes and crystallinity of ultrathin epitaxial films of layered materials studied with grazing incidence X-ray diffraction, T. Shimada, H. Nishikawa, A. Koma, Y. Furukawa, E. Arakawa, K. Takeshita, T. Matsushita, Surface Science 369, 379 (1996)
- Nanostructure fabrication by selective growth of molecular crystals on layered material substrates, K. Ueno, K. Sasaki, N. Takeda, K. Saiki, A. Koma, Applied Physics Letters 70, 1104 (1997)
- Van der Waals epitaxy of metal dihalide, T. Ueno, H. Yamamoto, K. Saiki, A. Koma, Applied Surface Science 113, 33 (1997)
- Investigation of the growth mechanism of layered semiconductor GaSe, K. Ueno, N. Takeda, K. Sasaki, A. Koma, Applied Surface Science 113, 38 (1997)
- Nanostructure fabrication using selective growth on nanosize patterns drawn by a scanning probe microscope, K. Sasaki, K. Ueno, A. Koma, Japanese Journal of Applied Physics 36, 4061 (1997)
- Epitaxial growth of ZnSe on Si(111) with lattice-matched layered InSe buffer layers, T. Löher, A. Koma, Japanese Journal of Applied Physics 37, L1062 (1998)
- Van der Waals type buffer layers: epitaxial growth of the large lattice mismatch system CdS/InSe/H-Si(111), T. Löher, K. Ueno, A. Koma, Applied Surface Science 130-132, 334 (1998)
- Fabrication of C60 Nanostructures by Selective Growth on GaSe/MoS2 and InSe/MoS2 Heterostructure Substrates, K. Ueno, K. Sasaki, T. Nakahara, A. Koma, Applied Surface Science, 130-132, 670 (1998)
- A novel method to fabricate a molecular quantum structure: Selective growth of C60 on layered material heterostructures, K. Ueno, K. Sasaki, K. Saiki, A. Koma, Japanese Journal of Applied Physics 38, 511 (1999)
- Van der Waals epitaxy for highly lattice-mismatched systems, A. Koma, Journal of Crystal Growth 201, 236 (1999)
- Modulated STM images of ultrathin MoSe2 films grown on MoS2(0001) studied by STM/STS, H. Murata, A. Koma, Physical Review B 59, 10327 (1999)
- Investigation of the growth mechanism of an InSe epitaxial layer on a MoS2 substrate, T. Hayashi, K. Ueno, K. Saiki, A. Koma, Journal of Crystal Growth 219, 115 (2000)